View BTD2098M3_1221243.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date : Page No. : 1/4
BTD2098M3
Features
* Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A * Excellent DC current gain characteristics * Complementary to BTB1386M3
Symbol
BTD2098M3
Outline
SOT-89
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 40 20 6 5 8 0.6 1 2 150 -55~+150 Unit V V V A(DC) A(Pulse) W C C
*1 *2 *3
Note : *1 Single pulse , Pw=10ms *2 Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm*10mm. *3 When mounted on a 40*40*0.7mm ceramic board.
BTD2098M3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 40 20 6 120 Typ. 0.25 150 30 Max. 0.5 0.5 1.0 820 50 Unit V V V uA uA V MHz pF
Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date : Page No. : 2/4
Test Conditions IC=50uA, IE=0 IC=1mA, IB=0 IE=50uA, IC=0 VCB=40V. IE=0 VEB=5V,IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 380us, Duty Cycle2%
Classification Of hFE
Rank Range Q 120~270 R 180~390 S 270~560 T 390~820
Characteristic Curves
Current Gain vs Collector Current 1000 HFE@VCE=2V Current Gain--- HFE 1000 VCESAT@IC=20IB 100 Saturation Voltage vs Collector Current
Saturation Voltage-(mV) 10000
10
100 1 10 100 1000 Collector Current---IC(mA)
1 0.1 1 10 100 1000 10000 Collector Current---IC(mA)
BTD2098M3
CYStek Product Specification
CYStech Electronics Corp.
Saturation Voltage vs Collector Current
1000 VCE(SAT)@IB=40IB
Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
10000
VBE(SAT)@IC=20IB
Saturation Voltage-(mV)
100
Saturation Voltage-(mV)
1 10 100 1000 10000
1000
10
1
100 1 10 100 1000 10000 Collector Current---IC(mA)
Collector Current---IC(mA)
Power Derating Curve
2.5
Power Disspation---Pd(W)
2.0
1.5
Page1 Note *3 Page1 Note *2
1.0
0.5
0.0 0 50 100 Ambient Temperature---Ta( ) 150
BTD2098M3
CYStek Product Specification
CYStech Electronics Corp.
SOT-89 Dimension
A
Spec. No. : C847M3 Issued Date : 2003.04.17 Revised Date : Page No. : 4/4
Marking:
1
2
C
3
H
AH
B
D
3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3
E F G
I
*: Typical
DIM A B C D E
Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201
Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51
DIM F G H I
Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161
Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2098M3
CYStek Product Specification

▲Up To Search▲

Price & Availability of BTD2098M3

	To Download BTD2098M3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .